indium tin oxide (ito) thin films were deposited on glass substrates by rf sputtering using an ito ceramic target (in2o3-sno2, 90-10 wt. %). after deposition, samples were annealed at different temperatures in vacuum furnace. the post vacuum annealing effects on the structural, optical and electrical properties of ito films were investigated. polycrystalline ito films have been analyzed in wide...

Structural, electrical and optical properties of indium tin oxide or ITO (In2O3:SnO2) thin films on different substrates are investigated. A 100-nm-thick pre-deposited zinc oxide (ZnO) buffer layer is utilized to simultaneously improve the electrical and optical properties of ITO films. High purity ZnO and ITO layers are deposited with a radio frequency sputtering in argon ambient with plasma p...

Indium tin oxide (ITO) thin films were deposited on glass substrates by RF sputtering using an ITO ceramic target (In2O3-SnO2, 90-10 wt. %). After deposition, samples were annealed at different temperatures in vacuum furnace. The post vacuum annealing effects on the structural, optical and electrical properties of ITO films were investigated. Polycrystalline...

A low level tin doped indium oxide, ITO, (ca. 10 w % SnO2) thin films were prepared on glass substrate by electron beam technique. Deposited films with deposition rate of 0.1–0.25 nm s were annealed at different temperatures from 250 to 550 °C in air. The thin films were characterized using low and high angle X-ray diffraction and UV-visible spectroscopy. The lattice constant and the grain size...

In this work new transparent conductive films that had a sandwich structure composed of ITO/metal/ITO multilayer films were prepared by reactive thermal evaporation technique on glass substrates without intentional substrate heating. Ag, Au and Cu thin films have been used as intermediate metal layer. The thickness of each layer in the ITO/metal/ITO films was kept constant at 50nm/10nm/40nm. Th...

The improvement of the physical properties of Indium Tin Oxide (ITO) layers is quite advantageous in photovoltaic applications. In this study the ITO film is deposited by RF sputtering onto p-type crystalline silicon (c-Si) with (100) orientation, multicrystalline silicon (mc-Si), and glass substrates coated with ZnO and annealed in vacuum furnace at 400°C. Electrical, optical, structural a...

   High transparent conductive indium tin oxide/titanium dioxide (ITO/TiO2) nanostructured thin film is prepared by sol-gel dip-coating technique. This method yielded monodisperse ITO nanoparticles with mean diameter of 12 nm. The atomic composition of the Sn within the ITO structure changed from 0-20 wt.%. Through controlled annealing temperature at 550 oC, the result...

the improvement of the physical properties of indium tin oxide (ito) layers is quite advantageous in photovoltaic applications. in this study the ito film is deposited by rf sputtering onto p-type crystalline silicon (c-si) with (100) orientation, multicrystalline silicon (mc-si), and glass substrates coated with zno and annealed in vacuum furnace at 400°c. electrical, optical, structural and m...

Indium tin oxide (ITO) thin films were prepared by the sol–gel dip-coating (SGDC) technique. The microstructure and electrical properties of ITO thin films crystallized using rapid thermal annealing (RTA) were compared with those of films prepared by classic thermal annealing (CTA). ITO thin films were successfully prepared by CTA at 500 jC for 30–60 min. At the same temperature of 500 jC and w...

Nickel oxide (NiO) semiconductors thin films were prepared by e-beam evaporation technique at different substrate temperatures ranging from room temperature to 400 C on glass substrate. Glancing incident X-ray diffraction depict that with the increases in substrate temperature the preferred orientation changes from (111) to (200) direction. Atomic force microscopy was used to investigate the su...